| PART |
Description |
Maker |
| K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片（了x4，x8
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125
256Mb E-die DDR SDRAM Specification 66 TSOP-II
Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP
DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4H560838E K4H560838E-TC_LB3 K4H560438E-TC_LA2 K4H |
DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4T56043QFNBSP K4T56083QFNBSP K4T56083QF K4T56083Q |
256Mb F-die DDR2 SDRAM
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4H560838F K4H561638F-UCCC K4H561638F-UCC4 K4H5608 |
256Mb F-die DDR400 SDRAM Specification 256Mb的的F -模具支持DDR400内存规格
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4H560838H |
(K4H560438H - K4H561638H) 256Mb H-die DDR SDRAM Specification
|
Samsung semiconductor
|
| K4H560838E-VLB3 K4H560438E-VC K4H560438E-VC_LA2 K4 |
256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant)
|
SAMSUNG[Samsung semiconductor]
|
| K4H560838F-UC/LA2 K4H561638F-UC/LA2 K4H560838F-UC/ |
256Mb F-die DDR SDRAM Specification 256Mb的的F - DDR SDRAM内存芯片规格
|
Samsung Semiconductor Co., Ltd.
|
| HYS72V32300GU-8-C2 HYS64V32300GU HYS64V32300GU-75- |
3.3 V 32M x 64/72-Bit, 256MByte SDRAM Modules 168-pin Unbuffered DIMM Modules
SDRAM|32MX64|CMOS|DIMM|168PIN|PLASTIC 内存| 32MX64 |的CMOS |内存| 168线|塑料
SDRAM|32MX72|CMOS|DIMM|168PIN|PLASTIC
SDRAM Modules - 256MB PC133 (3-3-3) 1-bank; End-of-Life
SDRAM Modules - 256MB PC133 (3-3-3) 1-bank (ECC); End-of-Life
SDRAM Modules - 256MB PC133 (2-2-2) 1-bank; End-of-Life
SDRAM Modules - 256MB PC133 (2-2-2) 1-bank (ECC); End-of-Life
|
INFINEON[Infineon Technologies AG]
Infineon Technologies A...
|
| MR18R162GAF0 MR16R162GAF0 MR18R1624AF0 MR18R1622AF |
64M X 16 RAMBUS MODULE, DMA184
TVS 500W 6.5V BIDIRECT DO-15 6Mx16显示）2/8/16）件RIMM的模块，基于256Mb阿芯片，32秒银行，16K/32ms参考，.5V
16Mx16显示）2/8/16）件RIMM的模块，基于256Mb阿芯片，32秒银行，16K/32ms参考，.5V
(MR18R1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
(MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
(16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| HYS64D16000GDL-8-B HYS64D16000GDL-6-B HYS64D16000G |
DDR SDRAM Modules - 256MB (32Mx64) PC3200 2-bank
DDR SDRAM Modules - 128MB (16Mx64) PC2700 1-bank
DDR SDRAM Modules - 128MB (16Mx64) PC2100 1-bank
DDR SDRAM Modules - 256MB (32Mx64) PC2100 2-bank
200-Pin Small Outline Dual-In-Line Memory Modules
|
INFINEON[Infineon Technologies AG]
|
| HY5V56BF HY5V56BL/SF-HI HY5V56BL/SF-SI |
SDRAM - 256Mb
16Mx16|3.3V|8K|H|SDR SDRAM - 256M
|
Hynix Semiconductor
|
| HYMP564S648-E3 HYMP564S648-C4 HYMP532S646-E3 HYMP5 |
200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver.
DDR2 SDRAM - SO DIMM 256MB
DDR2 SDRAM - SO DIMM 512MB
DDR2 SDRAM - SO DIMM 1GB
|
HYNIX[Hynix Semiconductor]
|
